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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP

Author

  • Jie Sun
  • Daniel Wallin
  • Ivan Maximov
  • Hongqi Xu

Summary, in English

In this letter, a novel sequential logic device based on three-terminal ballistic junctions (TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally integrated in a high-electron-mobility InGaAs/InP quantum-well material by a single-step lithography process. Electrical measurements reveal that the integrated device functions as a set-reset (SR) latch with voltage gains at room temperature. The demonstrated device provides a new and simple circuit design for SR latches in digital electronics.

Department/s

  • Solid State Physics

Publishing year

2008

Language

English

Pages

540-542

Publication/Series

IEEE Electron Device Letters

Volume

29

Issue

6

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics

Keywords

  • three-terminal ballistic
  • nanoelectronics
  • set-reset (SR) latch
  • junction (TBJ)

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106