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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems.

Author

  • Dmitry Suyatin
  • E.S. Soldatov
  • Ivan Maximov
  • Lars Montelius
  • Lars Samuelson
  • G.B. Khomutov
  • S.P. Gubin
  • A.N. Sergeev-Cherenkov

Editor

  • Z.I. Alferov
  • L. Esaki

Summary, in English

Gold nanoelectrodes with gaps of less than 10 nm were formed by conventional E-beam lithography on silicon substrates covered by Al2O3. Molecular films were deposited on the electrodes by Langmuir-Shaefer technique. The I-V curves of such systems show a suppressed conductance indicating a correlated electron tunnelling through the system. All measurements were made at room temperature.

Publishing year

2003

Language

English

Pages

327-329

Publication/Series

[Host publication title missing]

Volume

5023

Document type

Conference paper

Publisher

SPIE

Topic

  • Condensed Matter Physics

Keywords

  • single-electron tunneling
  • correlated electron tunneling
  • molecular electronics
  • molecular clusters
  • nanoelectrodes

Conference name

10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY

Conference date

2002-06-17

Conference place

St. Petersburg, Russian Federation

Status

Published