Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry

Author

  • AM Song
  • Ivan Maximov
  • M Missous
  • Werner Seifert

Summary, in English

We present a new type of nanometer-scale semiconductor nonlinear device, called self-switching device (SSD). The device was realized by simply etching insulating grooves into a semiconductor, between which a narrow channel with a broken symmetry was formed. Because of the asymmetry in the channel boundary, an applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a diode-like current-voltage characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually 0 to more than 10 V by simply adjusting the channel width. Furthermore, only one lithography step was needed to fabricate SSDs. We used two different material systems, InGaAs-InP and InGaAs-InAlAs, to realize SSDs and the results at room temperature were compared. We also show that by adding a third terminal to an SSD as a gate, the turn-on voltage of the device could be tuned by the gate bias and the device functions either as a tunable diode or as a transistor. (C) 2003 Elsevier B.V. All rights reserved.

Department/s

  • Solid State Physics

Publishing year

2004

Language

English

Pages

1116-1120

Publication/Series

Proceedings of the Eleventh International Conference on Modulated Semiconductor Structures (Physica E: Low-dimensional Systems and Nanostructures)

Volume

21

Issue

2-4

Document type

Conference paper

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • InGaAs-InAlAs
  • nonlinear
  • nanodevice
  • symmetry
  • InGaAs-InP

Conference name

Eleventh International Conference on Modulated Semiconductor Structures

Conference date

2003-07-14 - 2003-07-18

Conference place

Nara, Japan

Status

Published

ISBN/ISSN/Other

  • ISSN: 1386-9477