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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry


  • AM Song
  • Ivan Maximov
  • M Missous
  • Werner Seifert

Summary, in English

We present a new type of nanometer-scale semiconductor nonlinear device, called self-switching device (SSD). The device was realized by simply etching insulating grooves into a semiconductor, between which a narrow channel with a broken symmetry was formed. Because of the asymmetry in the channel boundary, an applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a diode-like current-voltage characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually 0 to more than 10 V by simply adjusting the channel width. Furthermore, only one lithography step was needed to fabricate SSDs. We used two different material systems, InGaAs-InP and InGaAs-InAlAs, to realize SSDs and the results at room temperature were compared. We also show that by adding a third terminal to an SSD as a gate, the turn-on voltage of the device could be tuned by the gate bias and the device functions either as a tunable diode or as a transistor. (C) 2003 Elsevier B.V. All rights reserved.


  • Solid State Physics

Publishing year







Proceedings of the Eleventh International Conference on Modulated Semiconductor Structures (Physica E: Low-dimensional Systems and Nanostructures)





Document type

Conference paper




  • Condensed Matter Physics


  • InGaAs-InAlAs
  • nonlinear
  • nanodevice
  • symmetry
  • InGaAs-InP

Conference name

Eleventh International Conference on Modulated Semiconductor Structures

Conference date

2003-07-14 - 2003-07-18

Conference place

Nara, Japan




  • ISSN: 1386-9477