Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions

Author

  • Naseem Abdel
  • Jan Pallon
  • Mariusz Graczyk
  • Ivan Maximov
  • Lars Wallman

Summary, in English

This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin detectors were a very low leakage current below 12 nA and a low full depletion voltage at a reverse bias less than 1.5 V. Finally, most of our thin detectors offer an energy resolution (FWHM) as low as 31 keV for 5.487 MeV alpha particles from a Am-241 source.

Department/s

  • Nuclear physics
  • Solid State Physics
  • Department of Biomedical Engineering
  • NanoLund

Publishing year

2013

Language

English

Pages

1182-1188

Publication/Series

IEEE Transactions on Nuclear Science

Volume

60

Issue

2

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Manufacturing, Surface and Joining Technology

Keywords

  • Energy resolution
  • leakage current
  • silicon nanotechnology
  • TMAH
  • etching
  • ultra-thin PIN detector

Status

Published

ISBN/ISSN/Other

  • ISSN: 0018-9499