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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Lift-off process for nanoimprint lithography


  • Patrick Carlberg
  • Mariusz Graczyk
  • Eva-Lena Sarwe
  • Ivan Maximov
  • Marc Beck
  • Lars Montelius

Summary, in English

We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.


  • Solid State Physics

Publishing year







Microelectronic Engineering



Document type

Conference paper




  • Condensed Matter Physics


  • lift off method
  • nanoimprint lithography
  • polymethyl methacrylate
  • PMMA
  • pattern transfer
  • oxygen plasma
  • liquid solvent
  • silicon
  • wet etch method
  • metal evaporation
  • 50 nm
  • 20 nm
  • SiO2
  • Au
  • surface adhesion
  • metal flakes
  • acetone
  • dissolution
  • bilayer method
  • metal layer
  • line widening effect

Conference name

28th International Conference on Micro- and Nano-Engineering, 2002

Conference date

2002-09-16 - 2002-09-19

Conference place

Lugano, Switzerland




  • ISSN: 1873-5568
  • ISSN: 0167-9317