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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Nanoimprint in mr-L 6000.1 XP/PMMA resist system

Author

  • Patrick Carlberg
  • Marc Beck
  • Mariusz Graczyk
  • Ivan Maximov
  • Eva-Lena Sarwe
  • Lars Montelius
  • K. Pfeiffer
  • F. Reuther
  • G. Gruetzner

Summary, in English

Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed

Department/s

  • Solid State Physics

Publishing year

2002

Language

English

Publication/Series

7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

Document type

Conference paper

Publisher

Lund University

Topic

  • Condensed Matter Physics

Keywords

  • resist profiles
  • plasma stability
  • glass transition temperature
  • nanoimprint lithography
  • XP/PMMA resist system
  • 100 nm
  • SEM
  • scanning electron microscopy

Conference name

Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)

Conference date

2002-06-24 - 2002-06-28

Conference place

Malmö, Sweden

Status

Published