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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

The influence of confining wall profile on quantum interference effects in etched Ga0.25In0.75As/InP billiards

Author

  • TP Martin
  • RP Taylor
  • H Linke
  • CA Marlow
  • GDR Hall
  • Ivan Shorubalko
  • Ivan Maximov
  • Werner Seifert
  • Lars Samuelson
  • TM Fromhold

Summary, in English

We present measurements of the potential profile of etched GaInAs/InP billiards and show that their energy gradients are an order of magnitude steeper than those of surface-gated GaAs/AlGaAs billiards. Previously observed in GaAs/AlGaAs billiards, fractal conductance fluctuations are predicted to be critically sensitive to the billiard profile. Here we show that, despite the increase in energy gradient, the fractal conductance fluctuations persist in the harder GaInAs/InP billiards. (C) 2004 Elsevier Ltd. All rights reserved.

Department/s

  • Solid State Physics

Publishing year

2003

Language

English

Pages

179-184

Publication/Series

Superlattices and Microstructures

Volume

34

Issue

3-6

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • wall profile
  • billiard
  • 2DEG
  • GaInAs/InP
  • FCF

Status

Published

ISBN/ISSN/Other

  • ISSN: 0749-6036