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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs

Author

  • Ivan Maximov
  • Patrick Carlberg
  • Daniel Wallin
  • Ivan Shorubalko
  • Werner Seifert
  • Hongqi Xu
  • Lars Montelius
  • Lars Samuelson

Summary, in English

We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.

Department/s

  • Solid State Physics

Publishing year

2002

Language

English

Pages

666-668

Publication/Series

Nanotechnology

Volume

13

Issue

5

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484