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Portrait of Jonas Tegenfeldt. Photo: Kennet Ruona

Jonas Tegenfeldt

Professor, Coordinator Nanobiology & Neuronanoscience

Portrait of Jonas Tegenfeldt. Photo: Kennet Ruona

High resolution 100kV electron beam lithography in SU-8

Author

  • B. Bilenberg
  • S. Jacobsen
  • M.s. Schmidt
  • L.h.d. Skjolding
  • P. Shi
  • P. Bøggild
  • J.O. Tegenfeldt
  • A. Kristensen

Summary, in English

High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved.

Department/s

  • Solid State Physics

Publishing year

2006

Language

English

Pages

1609-1612

Publication/Series

Microelectronic Engineering

Volume

83

Issue

4-9

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • SU-8
  • 100 kV electron beam lithography
  • reactive ion etch
  • DNA stretching
  • nanochannels

Conference name

Micro- and Nano-Engineering MNE 2005

Conference date

2005-09-19 - 2005-09-22

Conference place

Vienna, Austria

Status

Published

ISBN/ISSN/Other

  • ISSN: 0167-9317