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Knut Deppert

Knut Deppert

Professor

Knut Deppert

In Situ Etching for Total Control Over Axial and Radial Nanowire Growth

Author

  • Magnus Borgström
  • Jesper Wallentin
  • Johanna Trägårdh
  • Peter Ramvall
  • Martin Ek
  • Reine Wallenberg
  • Lars Samuelson
  • Knut Deppert

Summary, in English

We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis
  • Nanometer structure consortium (nmC)-lup-obsolete
  • NanoLund

Publishing year

2010

Language

English

Pages

264-270

Publication/Series

Nano Reseach

Volume

3

Issue

4

Document type

Journal article

Publisher

Springer

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Keywords

  • MOVPE
  • photoluminescence
  • in situ etching
  • nanowire growth

Status

Published

Research group

  • Nanometer structure consortium (nmC)-lup-obsolete

ISBN/ISSN/Other

  • ISSN: 1998-0124