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Knut Deppert

Knut Deppert

Professor

Knut Deppert

Precursor evaluation for in situ InP nanowire doping

Author

  • Magnus Borgström
  • E. Norberg
  • P. Wickert
  • H. A. Nilsson
  • Johanna Trägårdh
  • Kimberly Dick Thelander
  • G. Statkute
  • Peter Ramvall
  • Knut Deppert
  • Lars Samuelson

Summary, in English

The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n- type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes.

Department/s

  • Solid State Physics

Publishing year

2008

Language

English

Publication/Series

Nanotechnology

Volume

19

Issue

44

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484