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Knut Deppert

Knut Deppert

Professor

Knut Deppert

Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide

Author

  • SK Lee
  • CM Zetterling
  • M Ostling
  • I Aberg
  • Martin Magnusson
  • Knut Deppert
  • Lars-Erik Wernersson
  • Lars Samuelson
  • A Litwin

Summary, in English

We have investigated the electrical characteristics of Ti Schottky contacts with embedded Au nano-particles on various types of epilayers of SiC (4H- and 6H-SiC). From our current-voltage (I-V) and capacitance-voltage (C-V) measurements, we observed that Ti Schottky contacts with embedded Au nano-particles had 0.19 eV (n-4H-SiC) and 0.15 eV (n-6H-SiC) lower barrier height than those of particle free Ti Schottky contacts. In order to understand this reduction of the Schottky barrier height (SBH) for Ti Schottky contacts with embedded Au nano-particles, it has been proposed that SBH lowering is caused by an enhanced electric field due to the small size of the Au nano-particles and the large SBH difference. We have also tested these contacts on highly doped nand p-type SiC material to study ohmic contacts using linear TLM measurements.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology

Publishing year

2002

Language

English

Pages

937-940

Publication/Series

Materials Science Forum

Volume

389-3

Issue

2

Document type

Journal article

Publisher

Trans Tech Publications

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Schottky
  • ohmic contacts
  • nanoparticles
  • aerosol
  • SiC
  • contacts
  • image force lowering

Status

Published

ISBN/ISSN/Other

  • ISSN: 0255-5476