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Knut Deppert

Knut Deppert

Professor

Knut Deppert

Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures

Author

  • Jonas Ohlsson
  • Mikael Björk
  • Ann Persson
  • Claes Thelander
  • Reine Wallenberg
  • Martin Magnusson
  • Knut Deppert
  • Lars Samuelson

Summary, in English

Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations. (C) 2002 Elsevier Science B.V. All rights reserved.

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis

Publishing year

2002

Language

English

Pages

1126-1130

Publication/Series

Physica E: Low-dimensional Systems and Nanostructures

Volume

13

Issue

2-4

Document type

Conference paper

Publisher

Elsevier

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • III-V
  • one-dimensional transport
  • nano-whiskers
  • heterostructures

Conference name

Tenth International Conference on Modulated Semiconductor Structures. MSS 10

Conference date

2001-07-23 - 2001-07-27

Conference place

Linz, Austria

Status

Published

ISBN/ISSN/Other

  • ISSN: 1386-9477