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Knut Deppert

Knut Deppert

Professor

Knut Deppert

Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures

Author

  • Daniel Jacobsson
  • J. M. Persson
  • D. Kriegner
  • T. Etzelstorfer
  • Jesper Wallentin
  • Jakob Wagner
  • J. Stangl
  • Lars Samuelson
  • Knut Deppert
  • Magnus Borgström

Summary, in English

Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition.

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2012

Language

English

Publication/Series

Nanotechnology

Volume

23

Issue

24

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484