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Knut Deppert

Knut Deppert

Professor

Knut Deppert

Degenerate p-doping of InP nanowires for large area tunnel diodes

Author

  • Jesper Wallentin
  • Peter Wickert
  • Martin Ek
  • Anders Gustafsson
  • Reine Wallenberg
  • Martin Magnusson
  • Lars Samuelson
  • Knut Deppert
  • Magnus Borgström

Summary, in English

We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2011

Language

English

Publication/Series

Applied Physics Letters

Volume

99

Issue

25

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951