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Knut Deppert

Knut Deppert

Professor

Knut Deppert

Dynamics of extremely anisotropic etching of InP nanowires by HCl

Author

  • Magnus Borgström
  • Jesper Wallentin
  • Kenichi Kawaguchi
  • Lars Samuelson
  • Knut Deppert

Summary, in English

We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.

Department/s

  • Solid State Physics
  • NanoLund

Publishing year

2011

Language

English

Pages

222-224

Publication/Series

Chemical Physics Letters

Volume

502

Issue

4-6

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0009-2614