Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Knut Deppert

Knut Deppert

Professor

Knut Deppert

Structural investigation of GaInP nanowires using X-ray diffraction

Author

  • D. Kriegner
  • J. M. Persson
  • T. Etzelstorfer
  • Daniel Jacobsson
  • Jesper Wallentin
  • J. B. Wagner
  • Knut Deppert
  • Magnus Borgström
  • J. Stangl

Summary, in English

In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements. (C) 2013 Elsevier B.V. All rights reserved.

Department/s

  • Solid State Physics
  • NanoLund

Publishing year

2013

Language

English

Pages

100-105

Publication/Series

Thin Solid Films

Volume

543

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • Nanowires
  • X-ray diffraction
  • III-V semiconductors

Status

Published

ISBN/ISSN/Other

  • ISSN: 0040-6090