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Knut Deppert

Knut Deppert

Professor

Knut Deppert

Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Author

  • Jesper Wallentin
  • Laura Barrutia Poncela
  • Anna M. Jansson
  • Kilian Mergenthaler
  • Martin Ek
  • Daniel Jacobsson
  • Reine Wallenberg
  • Knut Deppert
  • Lars Samuelson
  • Dan Hessman
  • Magnus Borgström

Summary, in English

Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2012

Language

English

Publication/Series

Applied Physics Letters

Volume

100

Issue

25

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951