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Knut Deppert

Knut Deppert

Professor

Knut Deppert

MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures

Author

  • Mattias Borg
  • Maria Messing
  • Philippe Caroff
  • Kimberly Dick Thelander
  • Knut Deppert
  • Lars-Erik Wernersson

Summary, in English

We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology
  • Nano-lup-obsolete

Publishing year

2009

Language

English

Pages

249-252

Publication/Series

2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM)

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Conference name

21st International Conference on Indium Phosphide and Related Materials

Conference date

2009-05-10 - 2009-05-14

Conference place

Newport Beach, CA, United States

Status

Published

Research group

  • Nano-lup-obsolete

ISBN/ISSN/Other

  • ISSN: 1092-8669