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Knut Deppert

Knut Deppert

Professor

Knut Deppert

Optimization of Au-assisted InAs nanowires grown by MOVPE

Author

  • Kimberly Dick Thelander
  • Knut Deppert
  • Lars Samuelson
  • Werner Seifert

Summary, in English

Epitaxially-grown InAs nanowires may have great potential for nanowire device applications, due to the high electron mobility and narrow direct band gap of this material. Various applications will most likely require different selected growth conditions, due to such factors as temperature-sensitive substrates or pressure-dependent intrinsic doping. However, it has been reported that InAs nanowires are more sensitive to growth conditions than nanowires of other similar III-V materials. Here we discuss the effect of growth conditions on the morphology and growth rate of InAs nanowires, with the aim of determining the optimum growth achievable under various conditions. Growth temperature, relative and absolute precursor flows, seed particle size and density, and substrate type are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Department/s

  • Solid State Physics

Publishing year

2006

Language

English

Pages

326-333

Publication/Series

Journal of Crystal Growth

Volume

297

Issue

2

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • semiconducting III-V
  • nanostructures
  • metalorganic vapor phase epitaxy
  • material

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-0248