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Knut Deppert

Knut Deppert

Professor

Knut Deppert

Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Author

  • SK Lee
  • CM Zetterling
  • M Ostling
  • I Åberg
  • Martin Magnusson
  • Knut Deppert
  • Lars-Erik Wernersson
  • Lars Samuelson
  • A Litwin

Summary, in English

By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology

Publishing year

2002

Language

English

Pages

1433-1440

Publication/Series

Solid-State Electronics

Volume

46

Issue

9

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • image force
  • silicon carbide
  • nano-particles
  • Schottky barrier height
  • lowering

Status

Published

ISBN/ISSN/Other

  • ISSN: 0038-1101