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Knut Deppert

Knut Deppert

Professor

Knut Deppert

Crystal structure control in Au-free self-seeded InSb wire growth.

Author

  • Bernhard Mandl
  • Kimberly Dick Thelander
  • Dominik Kriegner
  • Mario Keplinger
  • Günther Bauer
  • Julian Stangl
  • Knut Deppert

Summary, in English

In this work we demonstrate experimentally the dependence of InSb crystal structure on the ratio of Sb to In atoms at the growth front. Epitaxial InSb wires are grown by a self-seeded particle assisted growth technique on several different III-V substrates. Detailed investigations of growth parameters and post-growth energy dispersive x-ray spectroscopy indicate that the seed particles initially consist of In and incorporate up to 20 at.% Sb during growth. By applying this technique we demonstrate the formation of zinc-blende, 4H and wurtzite structure in the InSb wires (identified by transmission electron microscopy and synchrotron x-ray diffraction), and correlate this sequential change in crystal structure to the increasing Sb/In ratio at the particle-wire interface. The low ionicity of InSb and the large diameter of the wire structures studied in this work are entirely outside the parameters for which polytype formation is predicted by current models of particle seeded wire growth, suggesting that the V/III ratio at the interface determines crystal structure in a manner well beyond current understanding. These results therefore provide important insight into the relationship between the particle composition and the crystal structure, and demonstrate the potential to selectively tune the crystal structure in other III-V compound materials as well.

Department/s

  • Solid State Physics
  • Nanometer structure consortium (nmC)-lup-obsolete
  • NanoLund

Publishing year

2011

Language

English

Publication/Series

Nanotechnology

Volume

22

Issue

14

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

Research group

  • Nanometer structure consortium (nmC)-lup-obsolete

ISBN/ISSN/Other

  • ISSN: 0957-4484