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Knut Deppert

Knut Deppert

Professor

Knut Deppert

Growth Mechanism of Self-Catalyzed Group III-V Nanowires.

Author

  • Bernhard Mandl
  • Julian Stangl
  • Emelie Hilner
  • Alexei Zakharov
  • Karla Hillerich
  • Anil Dey
  • Lars Samuelson
  • Günther Bauer
  • Knut Deppert
  • Anders Mikkelsen

Summary, in English

Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described.

Department/s

  • Solid State Physics
  • Synchrotron Radiation Research
  • MAX IV Laboratory
  • Department of Electrical and Information Technology
  • Nanometer structure consortium (nmC)-lup-obsolete
  • Digital ASIC-lup-obsolete
  • Nano-lup-obsolete
  • NanoLund

Publishing year

2010

Language

English

Pages

4443-4449

Publication/Series

Nano Letters

Volume

10

Issue

Online October 7, 2010

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Status

Published

Research group

  • Nanometer structure consortium (nmC)-lup-obsolete
  • Digital ASIC-lup-obsolete
  • Nano-lup-obsolete

ISBN/ISSN/Other

  • ISSN: 1530-6992