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Image_Marcus_Tornberg_withScale

Marcus Tornberg

Postdoctoral Fellow

Image_Marcus_Tornberg_withScale

Demonstration of Sn-seeded GaSb homo- and GaAs-GaSb heterostructural nanowires

Author

  • Marcus Tornberg
  • Erik K. Märtensson
  • Reza R. Zamani
  • Sebastian Lehmann
  • Kimberly A. Dick
  • Sepideh Gorji Ghalamestani

Summary, in English

The particle-assisted epitaxial growth of antimonide-based nanowires has mainly been realized using gold as the seed material. However, the Au-seeded epitaxial growth of antimonide-based nanowires such as GaSb nanowires presents several challenges such as for example direct nucleation issues and crystal structure tuning. Therefore, it is of great importance to understand the role of seed material choice and properties in the growth behavior of antimonide-based nanowires to obtain a deeper understanding and a better control on their formation processes. In this report, we have investigated the epitaxial growth of GaSb and GaAs-GaSb nanowires using in situ-formed tin seeds by means of metalorganic vapor phase epitaxy technique. This comprehensive report covers the growth of in situ-formed tin seeds and Sn-seeded GaSb nanowires on both GaAs and GaSb (111)B substrates, as well as GaAs-GaSb nanowires on GaAs (111)B substrates. The growth behavior and structural properties of the obtained GaSb nanowires are further investigated and compared with the Au-seeded counterparts. The results provided by this study demonstrate that Sn is a promising seed material for the growth of GaSb nanowires.

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2016-03-17

Language

English

Publication/Series

Nanotechnology

Volume

27

Issue

17

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Keywords

  • antimonide
  • GaAs
  • GaSb
  • heterostructure
  • III-V semiconductor
  • nanowire
  • Sn

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484