
Mattias Borg
Senior Lecturer, Coordinator Materials Science

Research:
My research interests lie in the development of nanotechnology for applications in electronics and neuromorphic computing. I do materials-driven research with the aim understand and control the physics and processes involved in realizing new nanoelectronic device concepts.
Ferroelectric memristors: I currently focus on developing resistive and ferroelectric memory and memristive devices based on HfO2 thin films, and their integration with III-V semiconductors. I am exploring the ability of these devices to function as synapses in artificial neuromorphic systems.
3D heterointegration: I explore how to integrate III-V nanostructures into the back-end-of-line in Si CMOS technology, using novel epitaxial methodologies with low thermal budget, based on Rapid Melt Growth and Template-Assisted Selective Epitaxy.
Previously: I pioneered antimonide-based nanowire synthesis during my PhD work, I have been strongly involved in InAs/GaSb-based tunnel field effect transistor (TFET) research both in Lund and at IBM, and at IBM I co-invented a novel method for CMOS-compatible III-V integration on Si, called Template-Assisted Selective Epitaxy (TASE).
Teaching:
- Memory technology for Machine Learning (EITP25)
The purpose of this course is to give an in depth understanding for the physics of common memory device technologies with focus on non-volatile memories. Furthermore, the course covers how these memory devices can be integrated to create neuromorphic hardware for applications in machine learning and artificial intelligence. Finally, the course gives an introduction to the architectures and algorithms that are used in machine learning, to give a basic understanding for the needs that memory devices and their connections need to fulfil.
- Electronics (EITA35)
This is the first course of the E program, aiming to provide an introduction to Electronics both at a theoretical and practical level.
Publications
Displaying of publications. Sorted by year, then title.
Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
Robin Athle, Mattias Borg
(2023) IEEE Transactions on Electron Devices, 70 p.1412-1416
Journal articleMonolithic InSb nanostructure photodetectors on Si using rapid melt growth
Heera Menon, Hossein Jeddi, Nicholas Paul Morgan, Anna Fontcuberta i Morral, Håkan Pettersson, et al.
(2023) Nanoscale Advances
Journal articleAccelerating AI using next-generation hardware : Possibilities and challenges with analog in-memory computing
Marcus Valtonen Ornhag, Puren Guler, Dmitry Knyaginin, Mattias Borg
(2023) Proceedings - 2023 IEEE/CVF Winter Conference on Applications of Computer Vision Workshops, WACVW 2023 , p.488-496
Conference paperAdvantage of Binary Stochastic synapses for hardware Spiking Neural Networks with realistic memristors
Karolis Sulinskas, Mattias Borg
(2022) Neuromorphic Computing and Engineering, 2
Journal articleImproved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
Robin Athle, Theodor Blom, Austin Irish, Anton E.O. Persson, Lars Erik Wernersson, et al.
(2022) Advanced Materials Interfaces, 9
Journal articleFabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth
Heera Menon, Nicholas Paul Morgan, Crispin Hetherington, Robin Athle, Matthew Steer, et al.
(2022) Physica Status Solidi (A) Applications and Materials Science, 219
Journal articleTop Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
Robin Athle, Anton E.O. Persson, Andrea Troian, Mattias Borg
(2022) ACS Applied Electronic Materials, 4 p.1002-1009
Journal articleTemplate-Assisted Selective Epitaxy of InAs on W
Johannes Svensson, Patrik Olausson, Heera Menon, Erik Lind, Mattias Borg
(2022) 2022 Compound Semiconductor Week, CSW 2022
Conference paperCubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2) : Raman spectroscopy and magnetic properties
A. Kúkoľová, M. Dimitrievska, A. P. Litvinchuk, S. P. Ramanandan, N. Tappy, et al.
(2021) CrystEngComm, 23 p.6506-6517
Journal articleImproved quality of InSb-on-insulator microstructures by flash annealing into melt
Heera Menon, Lasse Södergren, Robin Athle, Jonas Johansson, Matthew Steer, et al.
(2021) Nanotechnology, 32
Journal articleTuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
Zhihua Yong, Karl-Magnus Persson, Saketh, Ram Mamidala, Giulio D Acunto, Yi Liu, et al.
(2021) Applied Surface Science, 551
Journal articleOptimization of Near-Surface Quantum Well Processing
Patrik Olausson, Lasse Södergren, Mattias Borg, Erik Lind
(2021) Physica Status Solidi (A) Applications and Materials Science, 218
Journal articleEffects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
Robin Athle, Anton E.O. Persson, Austin Irish, Heera Menon, Rainer Timm, et al.
(2021) ACS applied materials & interfaces, 13 p.11089-11095
Journal articleA method for estimating defects in ferroelectric thin film MOSCAPs
Anton E. O. Persson, Robin Atle, Johannes Svensson, Mattias Borg, Lars-Erik Wernersson
(2020) Applied Physics Letters, 117
Journal articleLow-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
Saketh, Ram Mamidala, Karl-Magnus Persson, Mattias Borg, Lars-Erik Wernersson
(2020) IEEE Electron Device Letters, 41 p.1432-1435
Journal articleMobility of near surface MOVPE grown InGaAs/InP quantum wells
Lasse Södergren, Navya Sri Garigapati, Mattias Borg, Erik Lind
(2020) Applied Physics Letters, 117
Journal articleIII-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
Fredrik Lindelöw, Navya Sri Garigapati, Lasse Södergren, Mattias Borg, Erik Lind
(2020) Semiconductor Science and Technology, 35
Journal articleCross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
Karl-Magnus Persson, Saketh, Ram Mamidala, Olli-Pekka Kilpi, Mattias Borg, Lars-Erik Wernersson
(2020) Advanced Electronic Materials, 6
Journal articleReduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
Anton E.O. Persson, Robin Athle, Pontus Littow, Karl Magnus Persson, Johannes Svensson, et al.
(2020) Applied Physics Letters, 116
Journal articleInvestigation of Reverse Filament Formation in ITO/HfO2-based RRAM
Karl-magnus Persson, Saketh Ram Mamidala, Mattias Borg, Lars-erik Wernersson
(2019) 2019 Device Research Conference (DRC) , p.91-92
Conference paperIntegration of InSb on Si by Rapid Melt Growth
Heera Menon, Johannes Svensson, Lars-Erik Wernersson, Mattias Borg, Matthew Steer, et al.
(2019)
Conference paper: abstractTransition to the quantum hall regime in InAs nanowire cross-junctions
Johannes Gooth, Mattias Borg, Heinz Schmid, Nicolas Bologna, Marta D. Rossell, et al.
(2019) Semiconductor Science and Technology, 34
Journal articleFacet-selective group-III incorporation in InGaAs template assisted selective epitaxy
Mattias Borg, Lynne Gignac, John Bruley, Andreas Malmgren, Saurabh Sant, et al.
(2019) Nanotechnology, 30
Journal articleJunctionless tri-gate InGaAs MOSFETs
Cezar B. Zota, Mattias Borg, Lars Erik Wernersson, Erik Lind
(2017) Japanese Journal of Applied Physics, 56
Journal articleRecord performance for junctionless transistors in InGaAs MOSFETs
Cezar B. Zota, Mattias Borg, Lars Erik Wernersson, Erik Lind
(2017) 2017 Symposium on VLSI Technology, VLSI Technology 2017 , p.34-35
Conference paperBallistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
Johannes Gooth, Mattias Borg, Heinz Schmid, Vanessa Schaller, Stephan Wirths, et al.
(2017) Nano Letters, 17 p.2596-2602
Journal articleHigh-Mobility GaSb Nanostructures Cointegrated with InAs on Si
Mattias Borg, Heinz Schmid, Johannes Gooth, Marta D. Rossell, Davide Cutaia, et al.
(2017) ACS Nano, 11 p.2554-2560
Journal articleBallistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
J. Gooth, V. Schaller, S. Wirths, Heinz Schmid, M. Borg, et al.
(2017) Applied Physics Letters, 110
Journal articleObservation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
Moritz Knoedler, Nicolas Bologna, Heinz Schmid, Mattias Borg, Kirsten E. Moselund, et al.
(2017) Crystal Growth and Design, 17 p.6297-6302
Journal articleAutonomy in PhD-education – Supervising for Independence
Mattias Borg, Fredrik Kopsch, Torgny Roxå, Paul Stankovski, Johannes Svensson
(2016) LTHs 9:e Pedagogiska Inspirationskonferens , p.9-13
Conference paperIII-V heterojunction nanowire tunnel FETs monolithically integrated on silicon
Kirsten E. Moselund, Davide Cutaia, Heinz Schmid, M. Borg, Saurabh Sant, et al.
(2016) Nanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings
Conference paperLateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1 : Experimental Devices
Kirsten Emilie Moselund, Davide Cutaia, Heinz Schmid, Mattias Borg, Saurabh Sant, et al.
(2016) IEEE Transactions on Electron Devices, 63 p.4233-4239
Journal articleLateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 2 : Simulation Study of the Impact of Interface Traps
Saurabh Sant, Kirsten E. Moselund, Davide Cutaia, Heinz Schmid, Mattias Borg, et al.
(2016) IEEE Transactions on Electron Devices, 63 p.4240-4247
Journal articleInvestigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
Davide Cutaia, Heinz Schmid, Mattias Borg, Kirsten E. Moselund, Nicolas Bologna, et al.
(2016) 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 , p.152-153
Conference paperComplementary III-V heterojunction lateral NW Tunnel FET technology on Si
Davide Cutaia, Kirsten E. Moselund, Heinz Schmid, M. Borg, Antonis Olziersky, et al.
(2016) 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016, 2016-September
Conference paperLocal Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
Johannes Gooth, Robert Zierold, Philip Sergelius, Bacel Hamdou, Javier Garcia, et al.
(2016) ACS Nano, 10 p.7180-7188
Journal articleBroadening of length distributions of Au-catalyzed InAs nanowires
Yury Berdnikov, Nikolay Sibirev, Jan Schmidtbauer, Mattias Borg, Jonas Johansson, et al.
(2016) State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016: Proceedings of the 5th International Conference "State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects", 1748
Conference paperLength Distributions of Nanowires Growing by Surface Diffusion
Vladimir G. Dubrovskii, Yury Berdnikov, Jan Schmidtbauer, Mattias Borg, Kristian Storm, et al.
(2016) Crystal Growth & Design, 16 p.2167-2172
Journal articleIII-V device integration on Si using template-assisted selective epitaxy
Heinz Schmid, Mattias Borg, Kirsten Moselund, Lynne Gignac, Chris Breslin, et al.
(2015) Device Research Conference - Conference Digest, DRC, 2015-August p.255-256
Conference paperTemplate-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
H. Schmid, Mattias Borg, K. Moselund, L. Gignac, C. M. Breslin, et al.
(2015) Applied Physics Letters, 106
Journal articleVertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
Davide Cutaia, Kirsten E. Moselund, Mattias Borg, Heinz Schmid, Lynne Gignac, et al.
(2015) IEEE Journal of the Electron Devices Society, 3 p.176-183
Journal articleMechanisms of template-assisted selective epitaxy of InAs nanowires on Si
Mattias Borg, Heinz Schmid, Kirsten E. Moselund, Davide Cutaia, Heike Riel
(2015) Journal of Applied Physics, 117
Journal articleFabrication and analysis of vertical p-type InAs-Si nanowire tunnel FETs
Davide Cutaia, Kirsten E. Moselund, M. Borg, Heinz Schmid, L. Gignac, et al.
(2015) EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , p.61-64
Conference paperVertical III-V nanowire device integration on Si(100)
Mattias Borg, Heinz Schmid, Kirsten E. Moselund, Giorgio Signorello, Lynne Gignac, et al.
(2014) Nano Letters, 14 p.1914-1920
Journal articleTime-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires.
Andrius Jurgilaitis, Henrik Enquist, Pererik Andreasson, Anna Persson, Mattias Borg, et al.
(2014) Nano Letters, 14 p.541-546
Journal articleMeasurements of light absorption efficiency in InSb nanowires
Andrius Jurgilaitis, Henrik Enquist, Maher Harb, Kimberly Dick Thelander, Mattias Borg, et al.
(2014) Structural Dynamics, 1
Journal articleIII-V semiconductor nanowires for future devices
Heinz Schmid, Mattias Borg, K. Moselund, P. Das Kanungo, G. Signorello, et al.
(2014) Proceedings -Design, Automation and Test in Europe, DATE
Conference paperGeometric model for metalorganic vapour phase epitaxy of dense nanowire arrays
Mattias Borg, Jonas Johansson, Kristian Storm, Knut Deppert
(2013) Journal of Crystal Growth, 366 p.15-19
Journal articleHigh-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
Anil Dey, Mattias Borg, Bahram Ganjipour, Martin Ek, Kimberly Dick Thelander, et al.
(2013) IEEE Electron Device Letters, 34 p.211-213
Journal articleControl of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
Jun Wu, Mattias Borg, Daniel Jacobsson, Kimberly Dick Thelander, Lars-Erik Wernersson
(2013) Journal of Crystal Growth, 383 p.158-165
Journal articleDiameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures.
Martin Ek, Mattias Borg, Jonas Johansson, Kimberly Dick Thelander
(2013) ACS Nano, 7 p.3668-3675
Journal articleSynthesis and properties of antimonide nanowires
Mattias Borg, Lars-Erik Wernersson
(2013) Nanotechnology, 24
Journal article reviewDiameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors.
Johannes Svensson, Nicklas Anttu, Neimantas Vainorius, Mattias Borg, Lars-Erik Wernersson
(2013) Nano Letters, 13 p.1380-1385
Journal articleGaSb nanowire pFETs for III-V CMOS
Anil Dey, Johannes Svensson, Mattias Borg, Martin Ek, Erik Lind, et al.
(2013) IEEE Device Research Conference. Proceedings , p.13-14
Conference paper: abstractExtrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
Karl-Magnus Persson, Martin Berg, Mattias Borg, Jun Wu, Sofia Johansson, et al.
(2013) IEEE Transactions on Electron Devices, 60 p.2761-2767
Journal articleFrequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
Mikael Egard, Mats Ärlelid, Lars Ohlsson, Mattias Borg, Erik Lind, et al.
(2013) 2013 International Conference on Indium Phosphide and Related Materials (IPRM) , p.1-2
Conference paperExploring the diameter limitation in III-Sb heterostructure growth
Martin Ek, Mattias Borg, Johannes Svensson, Jonas Johansson, Kimberly Dick Thelander
(2013)
Conference paper: abstractHigh-Performance InAs Nanowire MOSFETs
Anil Dey, Claes Thelander, Erik Lind, Kimberly Dick Thelander, Mattias Borg, et al.
(2012) IEEE Electron Device Letters, 33 p.791-793
Journal articleHigh-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
Mikael Egard, Lars Ohlsson, Mats Ärlelid, Karl-Magnus Persson, Mattias Borg, et al.
(2012) IEEE Electron Device Letters, 33 p.369-371
Journal article1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
Collin J. Delker, Seongmin Kim, Mattias Borg, Lars-Erik Wernersson, David B. Janes
(2012) IEEE Transactions on Electron Devices, 59 p.1980-1987
Journal articleIn0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
Mikael Egard, Mats Ärlelid, Lars Ohlsson, Mattias Borg, Erik Lind, et al.
(2012) IEEE Electron Device Letters, 33 p.970-972
Journal articleUniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
Sepideh Gorji, Sofia Johansson, Mattias Borg, Erik Lind, Kimberly Dick Thelander, et al.
(2012) Nanotechnology, 23
Journal articleThin InAs membranes and GaSb buffer layers on GaAs(001) substrates
Gvidas Astromskas, Mattias Borg, Lars-Erik Wernersson
(2012) Journal of Vacuum Science and Technology B, 30
Journal articleCarrier control and transport modulation in GaSb/InAsSb core/shell nanowires
Bahram Ganjipour, Martin Ek, Mattias Borg, Kimberly Dick Thelander, Mats-Erik Pistol, et al.
(2012) Applied Physics Letters, 101
Journal articleHighly controlled InAs nanowires on Si(111) wafers by MOVPE
Sepideh Gorji, Sofia Johansson, Mattias Borg, Kimberly Dick Thelander, Lars-Erik Wernersson
(2012) physica status solidi (c), 9
Conference paperInfluence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
Mattias Borg, Martin Ek, Bahram Ganjipour, Anil Dey, Kimberly Dick Thelander, et al.
(2012) Applied Physics Letters, 101
Journal articleElectrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
Bahram Ganjipour, Mattias Borg, Martin Ek, Kimberly Dick Thelander, Mats-Erik Pistol, et al.
(2012)
Conference paper: abstractHigh frequency vertical InAs nanowire MOSFETs integrated on Si substrates
Sofia Johansson, Sepideh Gorji, Mikael Egard, Mattias Borg, Martin Berg, et al.
(2012) Physica Status Solidi. C, Current Topics in Solid State Physics, 9 p.350-353
Journal articleSingle InAs/GaSb Nanowire Low-Power CMOS Inverter
Anil Dey, Johannes Svensson, Mattias Borg, Martin Ek, Lars-Erik Wernersson
(2012) Nano Letters
Journal articleControlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
Kimberly Dick Thelander, Jessica Bolinsson, Mattias Borg, Jonas Johansson
(2012) Nano Letters, 12 p.3200-3206
Journal articleVertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
Karl-Magnus Persson, Martin Berg, Mattias Borg, Jun Wu, Henrik Sjöland, et al.
(2012) IEEE Electron Device Letters , p.195-196
Conference paper: abstractHigh Current Density InAsSb/GaSb Tunnel Field Effect Transistors
Anil Dey, Mattias Borg, Bahram Ganjipour, Martin Ek, Kimberly Dick Thelander, et al.
(2012) Device research conference , p.205-206
Conference paperCurrent Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
Mattias Borg, Anil Dey, Bahram Ganjipour, Martin Ek, Kimberly Dick Thelander, et al.
(2012)
Conference paper: abstractHeterointerface Control in III-V Semiconductor Nanowires
Kimberly Dick Thelander, Jessica Bolinsson, Martin Ek, Mattias Borg, Sofia Fahlvik Svensson, et al.
(2012)
Conference paper: abstractInAs Nanowires for High Frequency Electronics
Karl-Magnus Persson, Sofia Johansson, Martin Berg, Anil Dey, Kristofer Jansson, et al.
(2012)
Conference paper: abstractElectrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
Mattias Borg, Martin Ek, Bahram Ganjipour, Anil Dey, Kimberly Dick Thelander, et al.
(2012)
Conference paper: abstractHigh-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
Anil Dey, Claes Thelander, Erik Lind, Magnus Borgström, Mattias Borg, et al.
(2012)
Conference paperSelf-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers
Mikael Egard, Lars Ohlsson, B. Borg, Lars Erik Wernersson, Erik Lind
(2011) 69th Device Research Conference, DRC 2011 - Conference Digest
Conference paperRF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
Sofia Johansson, Mikael Egard, Sepideh Gorji, Mattias Borg, Martin Berg, et al.
(2011) IEEE Transactions on Microwave Theory and Techniques, 59 p.2733-2738
Journal articleHigh current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
Bahram Ganjipour, Anil Dey, Mattias Borg, Martin Ek, Mats-Erik Pistol, et al.
(2011) Nano Letters, 11 p.4222-4226
Journal articleTemperature and annealing effects on InAs nanowire MOSFETs
Sofia Johansson, Sepideh Gorji, Mattias Borg, Erik Lind, Lars-Erik Wernersson
(2011) Microelectronic Engineering, 88 p.1105-1108
Conference paperFormation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
Martin Ek, Mattias Borg, Anil Dey, Bahram Ganjipour, Claes Thelander, et al.
(2011) Crystal Growth & Design, 11 p.4588-4593
Journal articleGaSb nanowire single-hole transistor
Bahram Ganjipour, Henrik Nilsson, Mattias Borg, Lars-Erik Wernersson, Lars Samuelson, et al.
(2011) Applied Physics Letters, 99
Journal articleInterface composition of InAs nanowires with Al2O2 and HfO2 thin films
Rainer Timm, Martin Hjort, Alexander Fian, Mattias Borg, Claes Thelander, et al.
(2011) Applied Physics Letters, 99 p.1-222907
Journal articleEnhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
Mattias Borg, Kimberly Dick Thelander, Joel Eymery, Lars-Erik Wernersson
(2011) Applied Physics Letters, 98
Journal articleDiameter reduction of nanowire tunnel heterojunctions using in situ annealing
Mattias Borg, Martin Ek, Kimberly Dick Thelander, Bahram Ganjipour, Anil Dey, et al.
(2011) Applied Physics Letters, 99
Journal articleHigh Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
Mikael Egard, Lars Ohlsson, Mattias Borg, Filip Lenrick, Reine Wallenberg, et al.
(2011) 2011 IEEE International Electron Devices Meeting (IEDM)
Conference paper15 nm diameter InAs nanowire MOSFETs
Anil Dey, Claes Thelander, Magnus Borgström, Mattias Borg, Erik Lind, et al.
(2011) [Host publication title missing] , p.21-22
Conference paperInverter circuits based on vertical InAs nanowire MOSFETs
Anil Dey, Martin Berg, Mattias Borg, Sepideh Gorji, Kristofer Jansson, et al.
(2011)
Conference paperCompositional grading of axial heterojunctions in metal particle seeded III - V semiconductor nanowires.
Jonas Johansson, Mattias Borg, Jessica Bolinsson, Kimberly Dick Thelander
(2011)
Conference paperHigh Frequency Performance of Vertical InAs Nanowire MOSFET
Erik Lind, Mikael Egard, Sofia Johansson, Anne-Charlotte Johansson, Mattias Borg, et al.
(2010) 2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm)
Conference paperVertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
Mikael Egard, Sofia Johansson, Anne-Charlotte Johansson, Karl-Magnus Persson, Anil Dey, et al.
(2010) Nano Letters, 10 p.809-812
Journal articleVertical InAs nanowire wrap gate transistors for integration on a Si platform
Anil Dey, Mikael Egard, Sofia Johansson, Anne-Charlotte Johansson, Karl-Magnus Persson, et al.
(2010)
Conference paperInAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
Mattias Borg, Kimberly Dick Thelander, Bahram Ganjipour, Mats-Erik Pistol, Lars-Erik Wernersson, et al.
(2010) Nano Letters, 10 p.4080-4085
Journal articleAnalysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
V. Favre-Nicolin, F. Mastropietro, J. Eymery, D. Camacho, Y. M. Niquet, et al.
(2010) New Journal of Physics, 12
Journal articleInAs/GaSb heterostructure nanowires for tunnel FETs
Mattias Borg, Kimberly Dick Thelander, Philippe Caroff, Bahram Ganjipour, Claes Thelander, et al.
(2010)
Conference paperInSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
Philippe Caroff, Maria Messing, Mattias Borg, Kimberly Dick Thelander, Knut Deppert, et al.
(2009) Nanotechnology, 20
Journal article60 GHz Wavelet Generator for Impulse Radio Applications
Mikael Egard, Mats Ärlelid, Erik Lind, Philippe Caroff, Gvidas Astromskas, et al.
(2009) European Microwave Conference, 2009. EuMC 2009 , p.1908-1911
Conference paperMOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
Mattias Borg, Maria Messing, Philippe Caroff, Kimberly Dick Thelander, Knut Deppert, et al.
(2009) 2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM) , p.249-252
Conference paper60 GHz Wavelet Generator for Impulse Radio Applications
Mikael Egard, Mats Ärlelid, Erik Lind, Philippe Caroff, Gvidas Astromskas, et al.
(2009) EUWIT: 2009 European Wireless Technology Conference , p.234-237
Conference paperCharacterization of GaSb nanowires grown by MOVPE
Mattias Borg, Kimberly Dick Thelander, Henrik Nilsson, Niklas Sköld, Jakob Wagner, et al.
(2008) Journal of Chrystal Growth, 310 p.5119-5122
Conference paperGaAs/GaSb nanowire heterostructures grown by MOVPE
Mattias Borg, Kimberly Dick Thelander, Jakob Wagner, Philippe Caroff, Knut Deppert, et al.
(2008) Journal of Crystal Growth, 310 p.4115-4121
Journal articleInAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy
Philippe Caroff, Mattias Borg, D. Wheeler, M. Keplinger, Bernhard Mandl, et al.
(2008) Journal of Physics: Conference Series, 100 p.042017-042017
Conference paperHigh-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
Philippe Caroff, Jakob Wagner, Kimberly Dick Thelander, Henrik Nilsson, Mattias Borg, et al.
(2008) Small, 4 p.878-882
Journal articleTemperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE
Gvidas Astromskas, Mattias Borg, Philippe Caroff, Lars-Erik Wernersson
(2008) 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008 , p.354-356
Conference paper
Further Information
Available Master projects
Please email mattias [dot] borg [at] eit [dot] lth [dot] se (subject: Master%20thesis%20opportunity%3F) if you are interested in any of the projects below.
Modelling of currents in ferroelectric tunnel junctions
Ferroelectric tunnel junctions are important candidates for next-generation memories and artificial synapse devices. In this project numerical simulations for the current through the tunnel junction will be developed and matched to experimental data.
Crystallization by local heating
In highly integrated electronic systems, the limitations on thermal treatments are extremely strict, preventing the necessary anneals for synthesising ferroelectric hafnia. Here COMSOL will be used to simulate the viability of electrically induced crystallization by local heating in ferroelectric transistors.