
Rainer Timm
Associate Professor, Coordinator Nano Lund Characterization Labs

Research:
My research focuses on the atomic-scale characterization of semiconductor nanostructures, especially III-V semiconductor nanowires, including analysis of the atomic surface structure, resulting local electronic properties, the chemical and structural composition of interfaces, and in-situ studies of such nanostructure properties during device operation.
With scanning probe techniques like scanning tunneling microscopy and spectroscopy (STM/S) or conductive atomic force microscopy (AFM), the atomic structure and resulting electronic properties of nanowire surfaces are investigated, including local effects at nanowire heterostructures consisting of different materials or crystal structure. Using advanced STM geometries, also the interior structure of nanowires or mechanical and transport properties of individual upright standing nanowires can be revealed. From AFM and STM/S studies on individually contacted nanowires, we explore the interplay between local surface structure and electrical device performance for nanowire devices like tunnel diodes or solar cells.
As complementary technique I am using X-ray photoemission-based microscopy and spectroscopy at the MAX IV laboratory and other synchrotron facilities, for investigating the structure and chemical composition of surfaces and interfaces, e.g. doping profiles of individual nanowires or shallow interfaces of nanowire transistors with dielectric thin films. These techniques include X-ray Photoemission Spectroscopy (XPS) at ultrahigh vacuum or near-ambient conditions, angular resolved XPS (ARPES), and Photoemission electron microscopy (PEEM).
More information about my research division of Synchrotron Radiation Research can be found here.
Teaching:
I am coordinator of the M.Sc. program Physics - Materials Science.
I am responsible for the course Scanning Probe Microscopy (FYST42), together with Jan Knudsen, for M.Sc. and Ph.D. students of both Science and Engineering faculties.
I am also teaching in the courses Physics 3 - Quantum Physics: Solid State Physics (FYSC13) and Analysis at the nanoscale (KASF15/FYSD21).
Publications
Displaying of publications. Sorted by year, then title.
Atomic Hydrogen Annealing of Graphene on InAs Surfaces and Nanowires : Interface and Morphology Control for Optoelectronics and Quantum Technologies
S. Fatemeh Mousavi, Yen Po Liu, Giulio D'Acunto, Andrea Troian, José M. Caridad, et al.
(2022) ACS Applied Nano Materials, 5 p.17919-17927
Journal articleNitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence
Austin Irish, Xianshao Zou, Enrique Barrigon, Giulio D’Acunto, Rainer Timm, et al.
(2022) Nano Express, 3
Journal articleNanometric Moiré Stripes on the Surface of Bi2Se3Topological Insulator
Matteo Salvato, Maurizio De Crescenzi, Mattia Scagliotti, Paola Castrucci, Simona Boninelli, et al.
(2022) ACS Nano, 16 p.13860-13868
Journal articleRole of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2on Anatase TiO2(101)
Giulio D'Acunto, Rosemary Jones, Lucía Pérez Ramírez, Payam Shayesteh, Esko Kokkonen, et al.
(2022) Journal of Physical Chemistry C, 126 p.12210-12221
Journal articleHydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
Yen-Po Liu, Sofie Yngman, Andrea Troian, Giulio D Acunto, Adam Jönsson, et al.
(2022) Applied Surface Science
Journal articleImproved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
Zhongyunshen Zhu, Adam Jönsson, Yen Po Liu, Johannes Svensson, Rainer Timm, et al.
(2022) ACS Applied Electronic Materials, 4 p.531-538
Journal articleOxygen relocation during HfO2 ALD on InAs
Giulio D’Acunto, Esko Kokkonen, Payam Shayesteh, Virginia Boix, Foqia Rehman, et al.
(2022) Faraday Discussions, 236 p.71-85
Journal articleImproved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
Robin Athle, Theodor Blom, Austin Irish, Anton E.O. Persson, Lars Erik Wernersson, et al.
(2022) Advanced Materials Interfaces, 9
Journal articleBimolecular Reaction Mechanism in the Amido Complex-Based Atomic Layer Deposition of HfO2
Giulio D'acunto, Roman Tsyshevsky, Payam Shayesteh, Jean Jacques Gallet, Fabrice Bournel, et al.
(2022) Chemistry of Materials
Journal articleA 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)
Yi Liu, Sandra Benter, Chin Shen Ong, Renan P. Maciel, Linnéa Björk, et al.
(2022) ACS Nano
Journal articleHigh-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
Saketh, Ram Mamidala, Karl-Magnus Persson, Austin Irish, Adam Jönsson, Rainer Timm, et al.
(2021) Nature Electronics , p.914-914
Journal articleSelf-selective formation of ordered 1D and 2D GaBi structures on wurtzite GaAs nanowire surfaces
Yi Liu, Johan V. Knutsson, Nathaniel Wilson, Elliot Young, Sebastian Lehmann, et al.
(2021) Nature Communications, 12
Journal articleInducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopy
Lucas A.B. Marçal, Sandra Benter, Austin Irish, Dmitry Dzhigaev, Eitan Oksenberg, et al.
(2021) Physical Review Materials, 5
Journal articleSimulations of light collection in long tapered CsI(Tl) scintillators using real crystal surface data and comparisons to measurement
A. Knyazev, J. Park, P. Golubev, J. Cederkäll, H. Alvarez-Pol, et al.
(2021) Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 1003
Journal articleTuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
Zhihua Yong, Karl-Magnus Persson, Saketh, Ram Mamidala, Giulio D Acunto, Yi Liu, et al.
(2021) Applied Surface Science, 551
Journal articleSurface functionalization of III-V Nanowires
Rainer Timm, Anders Mikkelsen
(2021) Fundamental Properties of Semiconductor Nanowires , p.111-141
Book chapterEffects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
Robin Athle, Anton E.O. Persson, Austin Irish, Heera Menon, Rainer Timm, et al.
(2021) ACS applied materials & interfaces, 13 p.11089-11095
Journal articleImpact of Electrical Current on Single GaAs Nanowire Structure
Danial Bahrami, Ali AlHassan, Arman Davtyan, Ren Zhe, Taseer Anjum, et al.
(2021) Physica Status Solidi (B) Basic Research, 258
Journal articleCoherently strained and dislocation-free architectured AlGaN/GaN submicron-sized structures
Maryam Khalilian, Axel Persson, David Lindgren, Martin Rosén, Filip Lenrick, et al.
(2021) Nano Select, n/a p.1-14
Journal articleAtomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
Giulio D'Acunto, Andrea Troian, Esko Kokkonen, Foqia Rehman, Yen Po Liu, et al.
(2020) ACS Applied Electronic Materials, 2 p.3915-3922
Journal articleDislocation-Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications
Maryam Khalilian, Zhaoxia Bi, Jonas Johansson, Filip Lenrick, Olof Hultin, et al.
(2020) Small, 16
Journal articleStrain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
Dmitry Dzhigaev, Johannes Svensson, Abinaya Krishnaraja, Zhongyunshen Zhu, Zhe Ren, et al.
(2020) Nanoscale, 12 p.14487-14493
Journal articleLocal defect-enhanced anodic oxidation of reformed GaN nanowires
Jovana Colvin, Rafal Ciechonski, Anders Gustafsson, Lars Samuelson, B. Jonas Ohlsson, et al.
(2020) Physical Review Materials, 4
Journal articleOperando Surface Characterization of InP Nanowire p-n Junctions
Sarah R. McKibbin, Jovana Colvin, Andrea Troian, Johan V. Knutsson, James L. Webb, et al.
(2020) Nano Letters, 20 p.887-895
Journal articleLow temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
Yen Po Liu, Lasse Södergren, S. Fatemeh Mousavi, Yi Liu, Fredrik Lindelöw, et al.
(2020) Applied Physics Letters, 117
Journal articleRealization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
Zhaoxia Bi, Taiping Lu, Jovana Colvin, Elis Sjögren, Neimantas Vainorius, et al.
(2020) ACS Applied Materials and Interfaces, 12 p.17845-17851
Journal articleSurface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays
Jovana Colvin, Rafal Ciechonski, Filip Lenrick, Olof Hultin, Maryam Khalilian, et al.
(2019) Physical Review Materials, 3
Journal articleGaN nanowires as probes for high resolution atomic force and scanning tunneling microscopy
Sofie Yngman, Filip Lenrick, Yen-Po Liu, Zhe Ren, Maryam Khalilian, et al.
(2019) Review of Scientific Instruments, 90
Journal articleIn Vivo Detection and Absolute Quantification of a Secreted Bacterial Factor from Skin Using Molecularly Imprinted Polymers in a Surface Plasmon Resonance Biosensor for Improved Diagnostic Abilities
Gizem Ertürk Bergdahl, Tilde Andersson, Maria Allhorn, Sofie Yngman, Rainer Timm, et al.
(2019) ACS Sensors, 4 p.717-725
Journal articleUnravelling uniaxial strain effects on electronic correlations, hybridization and bonding in transition metal oxides
Zhihua Yong, Jiajun Linghu, Shibo Xi, Xinmao Yin, Meng Lee Leek, et al.
(2019) Acta Materialia, 164 p.618-626
Journal articleInGaN Platelets : Synthesis and Applications toward Green and Red Light-Emitting Diodes
Zhaoxia Bi, Filip Lenrick, Jovana Colvin, Anders Gustafsson, Olof Hultin, et al.
(2019) Nano Letters
Journal articleSurface smoothing and native oxide suppression on Zn doped aerotaxy GaAs nanowires
Sofie Yngman, Sarah R. McKibbin, Johan V. Knutsson, Andrea Troian, Fangfang Yang, et al.
(2019) Journal of Applied Physics, 125
Journal articleSelf-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
Rainer Timm, Ashley R. Head, Sofie Yngman, Johan V. Knutsson, Martin Hjort, et al.
(2018) Nature Communications, 9
Journal articleInAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
Andrea Troian, Johan V. Knutsson, Sarah R. McKibbin, Sofie Yngman, Aein S. Babadi, et al.
(2018) AIP Advances, 8
Journal articleNanobeam X-ray Fluorescence Dopant Mapping Reveals Dynamics of in Situ Zn-Doping in Nanowires
Andrea Troian, Gaute Otnes, Xulu Zeng, Lert Chayanun, Vilgaile Dagyte, et al.
(2018) Nano Letters , p.6461-6468
Journal articleA simple electron counting model for half-Heusler surfaces
Jason K. Kawasaki, Abhishek Sharan, Linda I. M. Johansson, Martin Hjort, Rainer Timm, et al.
(2018) Science Advances, 4
Journal articleSelf-assembled InN quantum dots on side facets of GaN nanowires
Zhaoxia Bi, Martin Ek, Tomas Stankevic, Jovana Colvin, Martin Hjort, et al.
(2018) Journal of Applied Physics, 123
Journal articleImaging Atomic Scale Dynamics on III-V Nanowire Surfaces during Electrical Operation
J. L. Webb, J. Knutsson, M. Hjort, S. R. McKibbin, S. Lehmann, et al.
(2017) Scientific Reports, 7
Journal articleElectronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit
Johan Valentin Knutsson, Sebastian Lehmann, Martin Hjort, Edvin Lundgren, Kimberly A. Dick, et al.
(2017) ACS Nano, 11 p.10519-10528
Journal articleA Method for Investigation of Size-Dependent Protein Binding to Nanoholes Using Intrinsic Fluorescence of Proteins
Bita Malekian, Ivan Maximov, Rainer Timm, Tommy Cedervall, Dan Hessman
(2017) ACS Omega, 2 p.4772-4778
Journal articleCrystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires
Martin Hjort, Peter Kratzer, Sebastian Lehmann, Sahil J. Patel, Kimberly A. Dick, et al.
(2017) Nano Letters, 17 p.3634-3640
Journal articleBand bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy
B. Khanbabaee, G. Bussone, J. V. Knutsson, I. Geijselaers, C. E. Pryor, et al.
(2016) Journal of Applied Physics, 120
Journal articleLow Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
Jun Wu, Aein Shiri Babadi, Daniel Jacobsson, Jovana Colvin, Sofie Yngman, et al.
(2016) Nano Letters, 16 p.2418-2425
Journal articleElectrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen
James Webb, Johan Knutsson, Martin Hjort, Sepideh Gorji, Kimberly Dick Thelander, et al.
(2015) Nano Letters, 15 p.4865-4875
Journal articleSurface morphology of Au-free grown nanowires after native oxide removal.
Martin Hjort, Johan Knutsson, Bernhard Mandl, Knut Deppert, Edvin Lundgren, et al.
(2015) Nanoscale, 7 p.9998-10004
Journal articleManipulating the Dynamics of Self-Propelled Gallium Droplets by Gold Nanoparticles and Nanoscale Surface Morphology
Alexei Zakharov, Erik Mårsell, Emelie Hilner, Rainer Timm, Jesper N. Andersen, et al.
(2015) ACS Nano, 9 p.5422-5431
Journal articleAtomic Scale Surface Structure and Morphology of InAs Nanowire Crystal Superlattices: The Effect of Epitaxial Overgrowth
Johan Knutsson, Sebastian Lehmann, Martin Hjort, Petra Reinke, Edvin Lundgren, et al.
(2015) ACS Applied Materials and Interfaces, 7 p.5748-5755
Journal articleScanning Tunneling Spectroscopy on InAs-GaSb Esaki Diode Nanowire Devices during Operation.
Olof Persson, James Webb, Kimberly Dick Thelander, Claes Thelander, Anders Mikkelsen, et al.
(2015) Nano Letters, 15 p.3684-3691
Journal articleStrong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning
Dmitry Suyatin, Vishal Jain, Valery A Nebol’sin, Johanna Trägårdh, Maria Messing, et al.
(2014) Nature Communications, 5
Journal articleElectronic and Structural Differences between Wurtzite and Zinc Blende InAs Nanowire Surfaces: Experiment and Theory
Martin Hjort, Sebastian Lehmann, Johan Knutsson, Alexei Zakharov, Yaojun A. Du, et al.
(2014) ACS Nano, 8 p.12346-12355
Journal articleHigh resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
James Webb, Olof Persson, Kimberly Dick Thelander, Claes Thelander, Rainer Timm, et al.
(2014) Nano Reseach, 7 p.877-887
Journal articleReal-time studies of the atomic layer deposition of metal oxides using Ambient pressure x-ray photoelectron spectroscopy
Joachim Schnadt, Ashley Head, Shilpi Chaudhary, Sofie Yngman, Niclas Johansson, et al.
(2014)
Conference paper: abstractInterface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
Olof Persson, Erik Lind, Edvin Lundgren, J. Rubio-Zuazo, G. R. Castro, et al.
(2013) AIP Advances, 3
Journal articleCurrent−Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
Rainer Timm, Olof Persson, David Engberg, Alexander Fian, James Webb, et al.
(2013) Nano Letters, 13 p.5182-5189
Journal articleEpitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)
Jason K. Kawasaki, Thomas Neulinger, Rainer Timm, Martin Hjort, Alexei Zakharov, et al.
(2013) Journal of Vacuum Science and Technology B, 31
Journal articleDirect Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.
Martin Hjort, Sebastian Lehmann, Johan Knutsson, Rainer Timm, Daniel Jacobsson, et al.
(2013) Nano Letters, 13 p.4492-4498
Journal articleAl2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
Jun Wu, Erik Lind, Rainer Timm, Martin Hjort, Anders Mikkelsen, et al.
(2012) Applied Physics Letters, 100 p.3-132905
Journal articleSurface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires.
Martin Hjort, Jesper Wallentin, Rainer Timm, Alexei Zakharov, Ulf Håkanson, et al.
(2012) ACS Nano
Journal articleAtomic Surface Structure and Electronic Properties of Semiconductor Nanowires Studied by Scanning Tunneling Microscopy and Spectroscopy
Rainer Timm, Martin Hjort, Olof Persson, Johan Knutsson, Sebastian Lehmann, et al.
(2012)
Conference paper: abstractPolytypic InAs Nanowire Studies Using Scanning Tunneling Microscopy
Johan Valentin Knutsson, Martin Hjort, Sebastian Lehmann, Rainer Timm, Edvin Lundgren, et al.
(2012)
Conference paper: abstractInterface composition of InAs nanowires with Al2O2 and HfO2 thin films
Rainer Timm, Martin Hjort, Alexander Fian, Mattias Borg, Claes Thelander, et al.
(2011) Applied Physics Letters, 99 p.1-222907
Journal articleDoping profile of InP nanowires directly imaged by photoemission electron microscopy
Martin Hjort, Jesper Wallentin, Rainer Timm, Alexei Zakharov, Jesper N Andersen, et al.
(2011) Applied Physics Letters, 99
Journal articleCross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs
Jason K. Kawasaki, Rainer Timm, Trevor E. Buehl, Edvin Lundgren, Anders Mikkelsen, et al.
(2011) Journal of Vacuum Science & Technology B, 29 p.03-104
Conference paperLocal Density of States and Interface Effects in Semimetallic ErAs Nanoparticles Embedded in GaAs
Jason Kawasaki, Rainer Timm, Kris T. Delaney, Edvin Lundgren, Anders Mikkelsen, et al.
(2011) Physical Review Letters, 107
Journal article (letter)Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
Rainer Timm, Martin Hjort, Alexander Fian, Claes Thelander, Erik Lind, et al.
(2011) Microelectronic Engineering, 88 p.1091-1094
Conference paperNew Flexible Toolbox for Nanomechanical Measurements with Extreme Precision and at Very High Frequencies.
Alexander Fian, Monica Lexholm, Rainer Timm, Bernhard Mandl, Ulf Håkanson, et al.
(2010) Nano Letters, 10 p.3893-3898
Journal articleReduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
Rainer Timm, Fian Alexander, Martin Hjort, Claes Thelander, Erik Lind, et al.
(2010) Applied Physics Letters, 97
Journal article (letter)Structure, mechanics and conductivity of semiconductor nanowires using scanning tunneling microscopy
Rainer Timm, Martin Hjort, A Fian, Magnus Borgström, Jesper Wallentin, et al.
(2010)
Conference paperHigh-k oxides on (100), (111)A and (111)B InAs substrates
Erik Lind, Lars-Erik Wernersson, Rainer Timm, Martin Hjort, Anders Mikkelsen, et al.
(2010)
Conference paper
Further Information
CV(pdf)