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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

Growth of Straight InAs-on-GaAs Nanowire Heterostructures.


  • Maria Messing
  • Jennifer Wong-Leung
  • Zeila Zanolli
  • Hannah J Joyce
  • H Hoe Tan
  • Qiang Gao
  • Reine Wallenberg
  • Jonas Johansson
  • Chennupati Jagadish

Summary, in English

One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but so far never in the other direction. In this article, we demonstrate the growth of straight axial heterostructures of InAs on top of GaAs. The heterostructure interface is sharp and we observe a dependence on growth parameters closely related to crystal structure as well as a diameter dependence on straight nanowire growth. The results are discussed by means of accurate first principles calculations of the interfacial energies. In addition, the role of the gold seed particle, the effect of its composition at different stages during growth, and its size are discussed in relation to the results observed.


  • Solid State Physics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year







Nano Letters





Document type

Journal article


The American Chemical Society (ACS)


  • Nano Technology




  • ISSN: 1530-6992