Doping of GaAsP nanowires grown by aerotaxy
Summary, in English
Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy  technique has already been reported.
The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.
- Solid State Physics
- Centre for Analysis and Synthesis
Conference paper: abstract
- Nano Technology
21th International Vacuum Congress
2019-07-01 - 2019-07-05