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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

Doping of GaAsP nanowires grown by aerotaxy

Author

  • Sudhakar Sivakumar
  • Irene Geijselaers
  • Axel Persson
  • Reine Wallenberg
  • Knut Deppert
  • Lars Samuelson
  • Martin H. Magnusson

Summary, in English

Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]
Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]
The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.

Department/s

  • Solid State Physics
  • NanoLund
  • Centre for Analysis and Synthesis

Publishing year

2019-07-01

Language

English

Document type

Conference paper: abstract

Topic

  • Nano Technology

Conference name

21th International Vacuum Congress

Conference date

2019-07-01 - 2019-07-05

Conference place

Malmö, Sweden

Status

Published