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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

InAs1-xPx Nanowires for Device Engineering

Author

  • Ann Persson
  • Mikael Björk
  • Sören Jeppesen
  • Jakob Wagner
  • Reine Wallenberg
  • Lars Samuelson

Summary, in English

We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P

concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter

of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution

transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual

heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements

we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2

eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at

room temperature.

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis

Publishing year

2006

Language

English

Pages

403-407

Publication/Series

Nano Letters

Volume

6

Issue

3

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992