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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si

Author

  • Olli Pekka Kilpi
  • Johannes Svensson
  • Jun Wu
  • Axel R. Persson
  • Reine Wallenberg
  • Erik Lind
  • Lars Erik Wernersson

Summary, in English

III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.

Department/s

  • Nano Electronics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2017-10-11

Language

English

Pages

6006-6010

Publication/Series

Nano Letters

Volume

17

Issue

10

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Other Electrical Engineering, Electronic Engineering, Information Engineering
  • Nano Technology

Keywords

  • heterostructure
  • InAs
  • InGaAs
  • MOSFETs
  • nanowire
  • vapor-liquid-solid

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 1530-6984