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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

In situ etching for control over axial and radial III-V nanowire growth rates using HBr.

Author

  • Alexander Berg
  • Kilian Mergenthaler
  • Martin Ek
  • Mats-Erik Pistol
  • Reine Wallenberg
  • Magnus Borgström

Summary, in English

We report on the influence of hydrogen bromide (HBr) in situ etching on the growth of InP, GaP and GaAs nanowires. We find that HBr can be used to impede undesired radial growth during axial growth for all three material systems. The use of HBr opens a window for optimizing the growth parameters with respect to the materials' quality rather than only their morphology. Transmission electron microscopy (TEM) characterization reveals a partial transition from a wurtzite crystal structure to a zincblende upon the use of HBr during growth. For InP, defect-related luminescence due to parasitic radial growth is removed by use of HBr. For GaP, the etching with HBr reduced the defect-related luminescence, but no change in peak emission energy was observed. For GaAs, the HBr etching resulted in a shift to lower photon emission energies due to a shift in the crystal structure, which reduced the wurtzite segments.

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2014

Language

English

Publication/Series

Nanotechnology

Volume

25

Issue

50

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484