Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

InN quantum dots on GaN nanowires grown by MOVPE

Author

  • Zhaoxia Bi
  • David Lindgren
  • Jonas Johansson
  • Martin Ek
  • Reine Wallenberg
  • Anders Gustafsson
  • Magnus Borgström
  • Jonas Ohlsson
  • Bo Monemar
  • Lars Samuelson

Summary, in English

In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2014

Language

English

Pages

421-424

Publication/Series

Physica Status Solici C: Current Topics in Solid State Physics, Vol 11, No 3-4

Volume

11

Issue

3-4

Document type

Conference paper

Publisher

John Wiley and Sons

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • quantum dots
  • nanowires
  • nitride
  • MOVPE

Conference name

10th International Conference on Nitride Semiconductors (ICNS)

Conference date

2013-08-25 - 2013-08-30

Status

Published

ISBN/ISSN/Other

  • ISSN: 1610-1642
  • ISSN: 1862-6351