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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

Electron transport in InAs nanowires and heterostructure nanowire devices

Author

  • Claes Thelander
  • Mikael Björk
  • Magnus Larsson
  • Adam Hansen
  • Reine Wallenberg
  • Lars Samuelson

Summary, in English

Nanowires in the InAs/InP material system are grown with catalyst-assisted chemical beam epitaxy. Ohmic contacts are then fabricated to selected wires, allowing electron transport measurements to be carried out at room-temperature as well as at low T. InAs nanowires show strong quantum confinement effects, where thin wires (<30nm) are depleted from carriers. Measurements on InAs wires with a quantum point contact configuration indicate a scattering length in the order of 100 nm. Heterostructure barriers of InP are also incorporated into InAs wires to produce resonant tunneling diodes and single-electron transistors (SETs) with different dot lengths. Wires containing dots with a length of 100 nm function as ideal SETs, whereas the transport in wires with 15 nm long dots is strongly governed by quantum confinement and resonant tunneling. For the smaller dots it is possible to observe electron transport through excited states. (C) 2004 Elsevier Ltd. All rights reserved.

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis

Publishing year

2004

Language

English

Pages

573-579

Publication/Series

Solid State Communications

Volume

131

Issue

9-10

Document type

Journal article

Publisher

Pergamon Press Ltd.

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Keywords

  • A. Semiconductors
  • A. Nanostructures
  • B. Crystal growth
  • D. Electronic transport

Status

Published

ISBN/ISSN/Other

  • ISSN: 1879-2766