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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

One dimensional heterostructures and resonant tunneling in III-V nanowires

Author

  • Claes Thelander
  • Jonas Ohlsson
  • Mikael Björk
  • Thomas Mårtensson
  • Ann Persson
  • Knut Deppert
  • Marcus Larsson
  • Reine Wallenberg
  • Lars Samuelson

Summary, in English

We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis

Publishing year

2003

Language

English

Pages

151-152

Publication/Series

2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675)

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics

Keywords

  • III-V nanowires
  • GaAs
  • one dimensional heterostructures
  • epitaxially nucleated semiconductor nanowires growth
  • InP
  • gold particles
  • InP heterostructure barriers
  • InAs
  • resonant tunneling diodes
  • single electron transistors

Conference name

IEEE International Symposium on Compound Semiconductors

Conference date

2003-08-25 - 2003-08-27

Conference place

San Diego, CA, United States

Status

Published

ISBN/ISSN/Other

  • ISBN: 0-7803-7820-2