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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

Defect-free InP nanowires grown in [001] direction on InP(001)

Author

  • U Krishnamachari
  • Magnus Borgström
  • Jonas Ohlsson
  • Nikolay Panev
  • Lars Samuelson
  • Werner Seifert
  • Magnus Larsson
  • Reine Wallenberg

Summary, in English

We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis

Publishing year

2004

Language

English

Pages

2077-2079

Publication/Series

Applied Physics Letters

Volume

85

Issue

11

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951