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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications

Author

  • CPT Svensson
  • Werner Seifert
  • Magnus Larsson
  • Reine Wallenberg
  • J Stangl
  • G Bauer
  • Lars Samuelson

Summary, in English

We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications.

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis

Publishing year

2005

Language

English

Pages

936-939

Publication/Series

Nanotechnology

Volume

16

Issue

6

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484