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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

Electron Tomography Reveals the Droplet Covered Surface Structure of Nanowires Grown by Aerotaxy

Author

  • Axel R. Persson
  • Wondwosen Metaferia
  • Sudhakar Sivakumar
  • Lars Samuelson
  • Martin H. Magnusson
  • Reine Wallenberg

Summary, in English

For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincblende nanowires are produced, using the growth method of Aerotaxy. The growth conditions used are such that Ga droplets, formed on the nanowire surface, increase in number and concentrations when the Sn-precursor concentration is increased. Droplet-covered wires grown with varying Sn concentrations are analyzed by transmission electron microscopy and electron tomography, which together establish the positioning of the droplets to be preferentially on {−111}B facets. These facets have the same polarity as the main wire growth direction, [−1−1−1]B. This means that the generated Ga particles can form nucleation sites for possible nanowire branch growth. The concept of azimuthal mapping is introduced as a useful tool for nanowire surface visualization and evaluation. It is demonstrated here that electron tomography is useful in revealing both the surface and internal morphologies of the nanowires, opening up for applications in the analysis of more structurally complicated systems like radially asymmetrical nanowires. The analysis also gives a further understanding of the limits of the dopants which can be used for Aerotaxy nanowires.

Department/s

  • NanoLund
  • Centre for Analysis and Synthesis
  • Solid State Physics

Publishing year

2018-08-16

Language

English

Publication/Series

Small

Volume

14

Issue

33

Document type

Journal article

Publisher

John Wiley and Sons

Topic

  • Physical Sciences

Keywords

  • Aerotaxy
  • electron tomography
  • high-resolution electron microscopy
  • nanostructures
  • nanowires

Status

Published

ISBN/ISSN/Other

  • ISSN: 1613-6810