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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET

Author

  • Mikael Egard
  • Lars Ohlsson
  • Mattias Borg
  • Filip Lenrick
  • Reine Wallenberg
  • Lars-Erik Wernersson
  • Erik Lind

Summary, in English

In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2011

Language

English

Publication/Series

2011 IEEE International Electron Devices Meeting (IEDM)

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

IEEE International Electron Devices Meeting (IEDM)

Conference date

2011-12-05 - 2011-12-07

Status

Published