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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

Epitaxial III-V nanowires on silicon

Author

  • Thomas Mårtensson
  • C Patrik T Svensson
  • Brent Wacaser
  • Magnus Larsson
  • Werner Seifert
  • Knut Deppert
  • Anders Gustafsson
  • Reine Wallenberg
  • Lars Samuelson

Summary, in English

We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on silicon substrates. This addresses the long-time challenge of integrating high performance III-V semiconductors with mainstream Si technology. Efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nanowires. We expect that advanced heterostructure devices, such as resonant tunneling diodes, superiattice device structures, and heterostructure photonic devices for on-chip communication, could now become available as complementary device technologies for integration with silicon.

Department/s

  • Solid State Physics
  • Centre for Analysis and Synthesis

Publishing year

2004

Language

English

Pages

1987-1990

Publication/Series

Nano Letters

Volume

4

Issue

10

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992