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Portrait of Reine Wallenberg. Photo: Kennet Ruona

Reine Wallenberg

Professor, Coordinator Materials Science

Portrait of Reine Wallenberg. Photo: Kennet Ruona

Compressively-strained GaSb nanowires with core-shell heterostructures

Author

  • Zhongyunshen Zhu
  • Johannes Svensson
  • Axel R. Persson
  • Reine Wallenberg
  • Andrei V. Gromov
  • Lars Erik Wernersson

Summary, in English

GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive strain to enhance the transport properties. Here, we for the first time demonstrate epitaxial GaSb-GaAsxSb1−x core-shell nanowires with a compressively strained core. Both axial and hydrostatic strain in GaSb core have been measured by X-ray diffraction (XRD) and Raman scattering, respectively. The optimal sample, almost without plastic relaxation, has an axial strain of −0.88% and a hydrostatic strain of −1.46%, leading to a noticeable effect where the light hole band is calculated to be 33.4 meV above the heavy hole band at the Γ-point. This valence band feature offers more light holes to contribute the transport process, and thus may provide enhanced hole mobility by reducing both the interband scattering and the hole effective mass. Our results show that lattice-mismatched epitaxial core-shell heterostructures of high quality can also be realized in the promising yet demanding GaSb-based system. [Figure not available: see fulltext.].

Department/s

  • Nano Electronics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2020-09

Language

English

Pages

2517-2524

Publication/Series

Nano Research

Volume

13

Issue

9

Document type

Journal article

Publisher

Springer

Topic

  • Nano Technology

Keywords

  • compressive strain
  • core-shell
  • GaSb-GaAsSb
  • heterostructure
  • nanowires
  • p-type transistors

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 1998-0124