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Portrait of Tönu Pullerits; Photo: Kennet Ruona

Tönu Pullerits

Professor

Portrait of Tönu Pullerits; Photo: Kennet Ruona

Defect State Assisted Z-scheme Charge Recombination in Bi2O2CO3/Graphene Quantum Dot Composites for Photocatalytic Oxidation of NO

Author

  • Yang Liu
  • Ying Zhou
  • Shan Yu
  • Zhanghui Xie
  • Yi Chen
  • Kaiwen Zheng
  • Susanne Mossin
  • Weihua Lin
  • Jie Meng
  • Tonu Pullerits
  • Kaibo Zheng

Summary, in English

In this work, we explored the photoinduced charge carriers dynamics rationalizing the photocatalytic oxidation of NO over N-doped Bi2O2CO3/graphene quantum dots composites(N-BOC/GQDs) via time-resolved photoluminescence (TRPL). Under visible light illumination, only GQDs can be photoexcited and inject electrons to N-BOC within 0.5 ns. Under UV light irradiation, the interfacial Z-scheme heterojunction recombination between the electrons in N-BOC and holes in GQDs dominate the depopulation of excited states within 0.36 ns. Such efficient Z-scheme recombination regardless of the large energy difference (1.66 eV) is mediated by the interfacial oxygen vacany defect states characterized by both density functional theory calculations (DFT) and electron paramagnetic resonance (EPR) measurement. This finding provide a novel strategic view to improve the photocatalytic performance of the nanocomposite by interfacial engineering

Department/s

  • Chemical Physics
  • NanoLund: Center for Nanoscience
  • eSSENCE: The e-Science Collaboration

Publishing year

2020

Language

English

Pages

772-781

Publication/Series

ACS Applied Nano Materials

Volume

3

Issue

1

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology
  • Condensed Matter Physics

Keywords

  • interfacial oxygen vacancy
  • interfacial Z-scheme heterojunction
  • NO oxdiation
  • time-resolved spectroscopy

Status

Published

ISBN/ISSN/Other

  • ISSN: 2574-0970