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Portrait of Tönu Pullerits; Photo: Kennet Ruona

Tönu Pullerits

Professor

Portrait of Tönu Pullerits; Photo: Kennet Ruona

High carrier mobility in low band gap polymer-based field-effect transistors

Author

  • MX Chen
  • X Crispin
  • E Perzon
  • MR Andersson
  • Tönu Pullerits
  • M Andersson
  • O Inganas
  • M Berggren

Summary, in English

A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm(2) V-1 s(-1).

Department/s

  • Chemical Physics

Publishing year

2005

Language

English

Publication/Series

Applied Physics Letters

Volume

87

Issue

25

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Atom and Molecular Physics and Optics

Status

Published

Research group

  • Pullerits

ISBN/ISSN/Other

  • ISSN: 0003-6951