The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Tönu Pullerits; Photo: Kennet Ruona

Tönu Pullerits

Professor

Portrait of Tönu Pullerits; Photo: Kennet Ruona

Constructing water-resistant CH3NH3PbI3 perovskite films : Via coordination interaction

Author

  • Bo Li
  • Chengbin Fei
  • Kaibo Zheng
  • Xuanhui Qu
  • Tönu Pullerits
  • Guozhong Cao
  • Jianjun Tian

Summary, in English

Organic-inorganic halide CH3NH3PbI3 (MAPbI3) perovskite solar cells (PSCs) have attracted intensive attention due to their high power conversion efficiency and low fabrication cost. However, MAPbI3 is known to be very sensitive to humidity, and the intrinsic long-term stability of the MAPbI3 film remains a critical challenge. 2-Aminoethanethiol (2-AET) was used as a ligand to bridge the organic compound (MAI) and inorganic compound (PbI2), which restricted the fast growth of PbI2 to realize the synchronous growth environment of MAI and PbI2 crystals, resulting in the formation of a compact MAPbI3 film with polygonal grains. Due to the compact (PbI2)-2-AET-(MAI) molecule barrier layers in the MAPbI3 structure, the resulting perovskite films showed excellent intrinsic water-resistance, with the MAPbI3 perovskite crystal structure retained for a long time (>10 minutes) after immersion in water. This work makes a step towards obtaining long-term stable MAPbI3 perovskite devices.

Department/s

  • Chemical Physics
  • NanoLund: Center for Nanoscience

Publishing year

2016

Language

English

Pages

17018-17024

Publication/Series

Journal of Materials Chemistry A

Volume

4

Issue

43

Document type

Journal article

Publisher

Royal Society of Chemistry

Topic

  • Materials Chemistry
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 2050-7488