Compound material synthesis and integration
The hows and whys of generating new nanomaterials
With a strong foundation in group III-V semiconductor vapour-phase synthesis and heterointegration, we explore earth-abundant semiconductors and ferroics for digital and energy applications. In situ investigations using e.g., ETEM and synchrotron X-rays provide atomic-scale understanding of the crystal growth process.
- Visualizing growth and function of nanostructures
- III–V semiconductor nanowires
- Ultra-wide bandgap semiconductors
- Transitional metal oxides
In situ transmission electron microscopy (TEM) provides unique possibilities for visualizing, at the atomic scale, the formation of inorganic nanocrystals. With this technique, we aim to understand the processes controlling structure, compositions as well as size and shape for nanostructures. The ultimate goal is to design materials and give them specific properties by controlling exactly how their atoms are placed. Similarly, in situ TEM studies can also provide information on the function of nanomaterial surfaces in, e.g. heterogeneous catalysis applications.
Fabrication of high-quality III–V semiconductor nanowires primarily using metal-organic vapour phase epitaxy or chemical beam epitaxy has been a key research area within NanoLund since before the year 2000. More than 20 years of experience and focus is resulting in high-quality nanowire structures of virtually all III-V element combinations and heterostructures with atomically sharp interfaces. We use extensive modelling in order to understand growth rates, polytype formation (crystal modifications that differ in stacking sequence only), and composition as a function of growth conditions; these connections to theory are not only important from a fundamental materials science perspective but are also crucial for the controlled and reproducible fabrication of nanowires. Control of both crystal structure and chemical composition gives unique possibilities to achieve new electronic devices, solar cell material, thermoelectric and quantum physics devices.
Ultra-wide bandgap semiconductors