RF Nanowire Field Effect Transistors
Transistors optimized for high frequencies rely on highly scaled device geometries and gate lengths. We explore and build nanoscale field effect transistors with narrow bandgap materials to realize and explore the high frequency device performance with frequencies towards THz. Device design and layout are explored in the atomistic limits to push transition frequencies and power gains.
A single nanowire field effect transistor with world record drive currents. Device and SEM image by Cezar Zota. Reference: IEDM 2016.
Novels Methods of Computation
Traditional methods of digital computation are based on Boolean-logic and CMOS implementation in a von Neumann architecture. We explore novel methods of computation utilizing beyond CMOS devices and methods of computation. Of general interests are implementation of quantum bits, neuromorphic computation and non-traditional switches.
High frequency III–V nanowire MOSFETs. Lind, Erik. Semiconductor Science and Technology, 31.9 (2016): 093005. DOI: 10.1088/0268-1242/31/9/093005
See article high frequency nanowire MOSFETs at publisher's site
Record performance for junctionless transistors in InGaAs MOSFETs Zota, Cezar B., et al. 2017 Symposium on VLSI Technology, IEEE, 2017. DOI: 10.23919/VLSIT.2017.7998190
See article record performance at publisher's site
InGaAs tri-gate MOSFETs with record on-current Zota, Cezar B., et al. 2016 IEEE International Electron Devices Meeting (IEDM). IEEE, 2016. DOI: 10.1109/IEDM.2016.7838336
See article InGaAs tri-gate MOSFETs at publisher's site
Cezar Zota, III-V MOSFETs for high-frequency and digital applications PhD thesis, Lund University, 2017.
See Cesar Zota's thesis at the Research Portal